elektronische bauelemente BCV27 40 v, 500ma npn darlington plastic encapsulated transistor 22-jan-2010 rev. a page 1 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. 1 base 2 emitter collector 3 top view a l c b d g h j f k e 1 2 3 1 2 3 rohs compliant product a suffix of -c specifies halogen & lead-free features for general af application high collector current high current gain absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 40 v collector to emitter voltage v ceo 30 v emitter to base voltage v ebo 10 v collector current - continuous i c 500 ma collector current - peak i cm 800 ma collector power dissipation p c 350 mw thermal resistance, junction to ambient air r ja 357 c/w junction, storage temperature t j , t stg 150, -65~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 40 - - v i c =100 a, i e = 0a collector to emitter breakdown voltage v (br)ceo 30 - - v i c =10ma, i b = 0a emitter to base breakdown voltage v (br)ebo 10 - - v i e =10 a, i c = 0a collector cut-off current i cbo - - 0.1 a v cb =30 v, i e = 0 a emitter cut-off current i ebo - - 0.1 a v eb =4 v, i c = 0 a h fe1 * 4000 - - v ce =1v, i c =100 a h fe2 * 10000 - - v ce =5v, i c =10ma h fe3 * 20000 - - v ce =5v, i c =100ma dc current gain h fe4 * 4000 - - v ce =5v, i c =500ma collector to emitter saturation voltage v ce(sat) * - - 1 v i c =100ma, i b =0.1ma base to emitter saturation voltage v be(sat) * - - 1.5 v i c =100ma, i b =0.1ma transition frequency f t - 170 - mhz v ce = 5v, i c =50ma, f=100mhz collector output capacitance c ob - 3.5 - pf v cb = 10v, f=1mhz *pulse test: pulse width Q 300 s; ducy cycle Q 2.0% sot-23 millimeter millimeter ref. min. max. ref. min. max. a 2.70 3.04 g - 0.18 b 2.10 2.80 h 0.40 0.60 c 1.20 1.60 j 0.08 0.20 d 0.89 1.40 k 0.6 ref. e 1.78 2.04 l 0.85 1.15 f 0.30 0.50
elektronische bauelemente BCV27 40 v, 500ma npn darlington plastic encapsulated transistor 22-jan-2010 rev. a page 2 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
elektronische bauelemente BCV27 40 v, 500ma npn darlington plastic encapsulated transistor 22-jan-2010 rev. a page 3 of 3 http://www.secosgmbh.com/ any changes of specification will not be informed i ndividually. characteristic curves
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